elektronische bauelemente SMS3404 5.8a, 30v, r ds(on) 30 m ? n-channel enhancement mode power mosfet 01-dec-2015 rev.a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description SMS3404 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for the use as a load switch or in pwm applications . the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t Q 10s) i d 5.8 a pulsed drain current 1 i dm 30 a thermal resistance from junction to ambient r ja 357 c / w operating junction and storage temperature t j , t stg 150, -55~150 c notes: 1. repetitive rating : pulse width is limite d by the maximum junction temperature. sot-23 r4 top view a l c b d g h j f k e 1 2 3 1 2 3 mill imeter millimeter ref. min. max. ref. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50
elektronische bauelemente SMS3404 5.8a, 30v, r ds(on) 30 m ? n-channel enhancement mode power mosfet 01-dec-2015 rev.a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition static characteristics drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250 a drain-source leakage current i dss - - 1 a v ds =30v, v gs =0 gate-source leakage current i gss - - 100 na v gs = 20v, v ds =0 gate-threshold voltage v gs(th) 1 1.4 3 v v ds =v gs , i d =250 a - 23 30 v ds =10v, i d =5.8a static drain-source on-resistance 1 r ds(on) - 31 42 m v gs =4.5v, i d =4.8a forward transconductance 1 g fs 5 - - s v ds =5v, i d =5.8a diode forward voltage v sd - - 1 v i s =1a dynamic characteristics input capacitance c iss - 820 - output capacitance c oss - 118 - reverse transfer capacitance c rss - 85 - pf v gs =0 v ds =15v f =1.0mhz gate resistance r g - - 1.5 v gs = v ds =0, f =1.0mhz switching characteristics turn-on delay time t d(on) - 6.5 - rise time t r - 3.1 - turn-off delay time t d(off) - 15.1 - fall time t f - 2.7 - ns v ds =15v v gs =10v r gen =3 r l =2.6 notes: 1. pulse width 300s, duty cycle 0.5%.
elektronische bauelemente SMS3404 5.8a, 30v, r ds(on) 30 m ? n-channel enhancement mode power mosfet 01-dec-2015 rev.a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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